Title:
LIGHT SOURCE FOR SEMICONDUCTOR LITHOGRAPHY
Document Type and Number:
Japanese Patent JP2014175495
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a light source for lithography which allows for generation of high temperature, high density plasma, while recovering debris occurring with development of plasma effectively.SOLUTION: A light source for semiconductor lithography generating light of short wavelength for patterning a circuit on a semiconductor wafer includes a light source body having an outer peripheral wall defining an internal space filled with stannane gas under a state of negative pressure, reverse magnetic field configuration generation means for generating a reverse magnetic field configuration in the internal space, in order to generate plasma via stannane gas in the internal space of the light source body, and debris recovery means for recovering debris occurring by generation of plasma in the internal space of the light source body.
Inventors:
ONISHI MASAMI
WAHEED HUGHGLASS
WAHEED HUGHGLASS
Application Number:
JP2013047227A
Publication Date:
September 22, 2014
Filing Date:
March 08, 2013
Export Citation:
Assignee:
UNIV KANSAI
International Classes:
H01L21/027; H05G2/00; H05H1/08
Attorney, Agent or Firm:
Noboru Fujimoto
Hiroaki Nakatani
Hiroaki Nakatani