PURPOSE: To form an avalanche photodiode for long-wavelength light detection use whose ionization coefficient of a hole is large and whose noise is little by a method wherein a solvent of Sb is used as a raw material solution and a GaAs substrate plane is set to (111)B.
CONSTITUTION: A substrate plane of a GaAs substrate is set to (111)B. A solvent of Sb is used as a raw material solution. By using this raw material solution, a semiconductor layer containing Ga and Sb is grown on the GaAs substrate by a liquid epitaxial growth method. Because a growth operation is executed under a condition that Sb exists excessively in this manner, the occurrence of a vacant lattice point on the Sb side is reduced; a concentration value of a hole in a growth layer is lowered sharply.
KUWAZUKA HARUHIKO
NISHIYAMA SOICHI
