Title:
LIQUID PHASE EPITAXIAL GROWING APPARATUS
Document Type and Number:
Japanese Patent JPS5777095
Kind Code:
A
Abstract:
PURPOSE:To easily take out the remainder of a semiconductor material after solidification by forming a recess coated internally with quartz for holding the remainder in the support of the titled apparatus used in a sliding method. CONSTITUTION:This liq. phase epitaxial growing apparatus is composed of a support table 11 provided with an embedded dummy substrate 3 made of CdTe and an embedded substrate 4 made of CdTe for growth and of a sliding member 12 moving on the table 11 while sliding and provided with a through hole 15 retain inging the liq, phase 6 of a semiconductor crystal material for epitaxial growth on the substrate 4. A recess 13 for holding the remainder of the liq. phase 6 is formed in the table 11, and the inside of the recess is coated with a quartz glass film 14. As a result, the remainder put in the recess 13 does not stick to the table 11 even after solidification and can be taken out easily.
Inventors:
ITOU MICHIHARU
YOSHIKAWA MITSUO
HAMASHIMA SHIGEKI
YOSHIKAWA MITSUO
HAMASHIMA SHIGEKI
Application Number:
JP15093180A
Publication Date:
May 14, 1982
Filing Date:
October 27, 1980
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
C30B19/06; C30B19/00; H01L21/02; H01L21/208; H01L21/368; (IPC1-7): C30B19/00; H01L21/02; H01L21/368