To provide a magnetic memory device having high durability against noise at memory operation, while allowing high integration and having a sufficient read-out margin with respect to the performance variance of an MTJ element, as to the magnetic memory device utilizing a resistance change based on the direction of a spin of a magnetic layer, and to provide a read-out method and a write-in method of such a magnetic memory device.

This device is equipped with: a memory cell having two magneto-resistance effect elements connected to each other in series forming a complementary resistive state and a selection transistors connected to interface nodes of these magneto-resistance effect elements; bit lines connected to the interface nodes of the magneto-resistance effect elements through selection transistors; and a read-out circuit for reading storage information stored in the magneto-resistance effect elements in accordance with voltages of the interface nodes outputted to the bit lines.