Title:
MAGNETIC THIN FILM AND MAGNETORESISTIVE EFFECT ELEMENT
Document Type and Number:
Japanese Patent JP2008192632
Kind Code:
A
Abstract:
To provide the magnetic thin film structure of a magnetoresistive effect element in which the magnetization direction of a pin layer formed at the magnetoresistive effect element can be fixed more surely.
The magnetoresistive effect element has a magnetoresistive effect film including pin layers 14a, 14b and a free layer 17 sandwiched between a lower shield layer 10 and an upper shield layer 19 wherein an antiferromagnetic layer 13 composed of an Mn based antiferromagnetic material is formed at a lower layer of the pin layer 14a through an Mn layer 22 on an interface.
Inventors:
TAKAHASHI KEN
TSUNODA MASAKIYO
KOMAGAKI KOJIRO
TSUNODA MASAKIYO
KOMAGAKI KOJIRO
Application Number:
JP2007022124A
Publication Date:
August 21, 2008
Filing Date:
January 31, 2007
Export Citation:
Assignee:
FUJITSU LTD
UNIV TOHOKU
UNIV TOHOKU
International Classes:
H01F10/32; G11B5/39; H01F10/16; H01F41/18; H01L21/8246; H01L27/105; H01L43/08; H01L43/10
Domestic Patent References:
| JP2005044489A | 2005-02-17 | |||
| JP2003198005A | 2003-07-11 |
Attorney, Agent or Firm:
Takao Watanuki
Horimai Kazuharu
Horimai Kazuharu
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