Title:
MAGNETORESISTIVE EFFECT ELEMENT
Document Type and Number:
Japanese Patent JP2018056388
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a magnetoresistive effect element which can achieve a high MR ratio.SOLUTION: A magnetoresistive effect element comprises a laminate in which an underlying layer, a first ferromagnetic metal layer, a tunnel barrier layer, and a second ferromagnetic metal layer are stacked in this order. The underlying layer includes a nitride. The tunnel barrier layer includes a substance selected from a group consisting of MgAlO, ZnAlO, MgO and γ-AlO. The degree of lattice matching of a lattice constant of the tunnel barrier layer and a lattice constant of a crystal structure that the underlying layer can take is within 5%.SELECTED DRAWING: Figure 1
Inventors:
SASAKI TOMOO
Application Number:
JP2016192007A
Publication Date:
April 05, 2018
Filing Date:
September 29, 2016
Export Citation:
Assignee:
TDK CORP
International Classes:
H01L43/10; G01R33/09; G11B5/39; H01F10/16; H01F10/30; H01L21/8246; H01L27/105; H01L29/82; H01L43/08
Attorney, Agent or Firm:
Sumio Tanai
Norihiko Ara
Masato Iida
Akihiro Ogino
Norihiko Ara
Masato Iida
Akihiro Ogino