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Title:
磁気抵抗効果素子、回路装置及び回路ユニット
Document Type and Number:
Japanese Patent JP7168231
Kind Code:
B2
Abstract:
There is provided a magnetoresistance effect element includes: a channel layer that extends in a first direction; a recording layer which includes a film formed from a ferromagnetic material, of which a magnetization state is changed to one of two or greater magnetization states, and which is formed on the channel layer; a non-magnetic layer that is provided on a surface of the recording layer; a reference layer which is provided on a surface of the non-magnetic layer, which includes a film formed from a ferromagnetic material, and of which a magnetization direction is fixed; a terminal pair that includes a first terminal and a second terminal which are electrically connected to the channel layer with an interval in the first direction, and to which a current pulse for bringing the recording layer to any one magnetization state with a plurality of pulses is input by flowing a current to the channel layer between the first terminal and the second terminal; and a third terminal that is electrically connected to the reference layer.

Inventors:
Shunsuke Fukami
Krenkov Alexander
borders william andrew
Hideo Ohno
Tetsuro Endo
Application Number:
JP2019570705A
Publication Date:
November 09, 2022
Filing Date:
January 30, 2019
Export Citation:
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Assignee:
Tohoku University
International Classes:
H01L29/82; G06G7/60; G06N3/063; H01L43/08; H01L43/10
Domestic Patent References:
JP2010103303A
Foreign References:
WO2016159017A1
Other References:
NISHITANI, Y. et al.,Ferroelectric synapse device with brain-like learning function: Analog conductance control in a ferr,Extended Abstracts of the 2012 International Conference on Solid State Devices and Materials,2012年,pp. 1140-1141
BORDERS, William A. et al.,Analogue spin-orbit torque device for artificial-neural-network-based associative memory operation,Applied Physics Express,2016年12月20日,Vol. 10,pp. 013007-1-013007-4,
Attorney, Agent or Firm:
Patent Attorney Drite International Patent Office



 
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