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Title:
磁気抵抗素子とその製造方法、およびこの素子を含む不揮発メモリ
Document Type and Number:
Japanese Patent JP3981358
Kind Code:
B2
Abstract:
A magnetoresistive element includes a pair of ferromagnetic layers (11, 13) and a non-magnetic layer (12) arranged between the ferromagnetic layers. At least one of the ferromagnetic layers (11, 13) has a composition expressed by (MxLy)100-zRz at the interface with the non-magnetic layer (12). The non-magnetic layer (12) includes at least one element selected from the group consisting of B, C, N, O, and P. Here, M is FeaCobNic, L is at least one element selected from the group consisting of Pt, Pd, Ir, and Rh, R is an element that has a lower free energy to form a compound with the element of the non-magnetic layer (12) that is at least one selected from the group consisting of B, C, N, O, and P than does any other element included in the composition as M or L, and a, b, c, x, y, and z satisfy a + b + c = 100, a ≥ 30, x + y = 100, 0 < y ≤ 35, and 0.1 ≤ z ≤ 20. This element can provide a high MR ratio. A method for manufacturing a magnetoresistive element includes a first heat treatment process at 200 DEG C to 330 DEG C for not less than one hour and a second heat treatment process at not less than 340 DEG C performed after the first heat treatment process.

Inventors:
Nozomi Matsukawa
Masayoshi Hiramoto
Akihiro Odagawa
Yasunari Sugita
Satomi third son
Yoshio Kawashima
Application Number:
JP2003568708A
Publication Date:
September 26, 2007
Filing Date:
February 14, 2003
Export Citation:
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Assignee:
Matsushita Electric Industrial Co., Ltd
International Classes:
H01L43/08; H01F10/32; H01F41/30; H01L21/8246; H01L27/105; H01L43/12; G11B5/39; H01L27/22
Domestic Patent References:
JP9082524A
JP2003086865A
JP2002204010A
JP2002319722A
JP2002344042A
Foreign References:
WO2001024289A1
Other References:
Japanese Journal of Applied Physics,2002年10月 1日,Vol.41, No.10A,pp.L1072-L1074
Attorney, Agent or Firm:
Ikeuchi, Sato & Partners