To prevent the characteristics degradation of a capacitor due to the damages to the interface between the electrode and the dielectric material film due to plasma-etching damages and hydrogen, by forming sidewalls at least on both sides of a capacitor dielectric material film and at the same time patterning a lower capacitor electrode.

After a material layer for spacer preparation is evaporated onto the entire area of a semiconductor substrate, a spacer material layer is etched anisotropically to form sidewall spacers 120a, at least on both sides of a capacitor dielectric material film 104a. In addition, during the anisotropic etching process, a lower capacitor electrode 102a is formed by simultaneously patterning a lower capacitor electrode material layer 102. In this case, the sidewall spacers 120a can minimize the plasma damages to the capacitor dielectric film 104a during the patterning of the lower capacitor electrode material layer 102. Consequently, a capacitor 122, in which the characteristics degradation of the capacitor is prevented is completed.