MANUFACTURE OF COMPLEMENTARY TYPE DIELECTRIC ISOLATING SUBSTRATE

Japanese Patent JPS60254746

A

PURPOSE:To prevent the collapse of shapes at the four corners of a P type single crystal island, by making a mask of an N type single crystal island approach to the inside, performing epitaxial growing, and effectively expanding a single crystal silicon region. CONSTITUTION:A region on an N type single crystal substrate 1 other than an N type single crystal island 2 formed on the substrate and a region in the vicinity of the N type single crystal island 2, with width about 5mum are masked by a silicon oxide film 3 and a silicon nitride film 4. N type impurity ions are implanted, and an N type single crystal embedded layer 5 having high impurity concentration is formed. Then, selective oxidation is performed, and the N type single crystal island 2 is masked by a silicon oxide film having a thickness of about 1.5mum. The silicon oxide film 3 and the silicon nitride film 4 other than said masked part are removed. P type impurities are doped and epitaxial growing is performed to a thickness higher than the height of the N type single crystal island 2. Thus the masks 3 and 4 are extended to the N type single crystal island 2. Then a silicon oxide film 6 is contracted to the N type single crystal island 2 by the amount of said extension. A single crystal silicon layer 7 is expanded outward. When a P type single crystal 11 is formed in the next process, the collapse of shapes at the four corners of the P type single crystal 11 due to the difference in etching speed can be prevented.

SHIBATA SHIGERU
TOGASHI KOUICHI

JP11131284A

December 16, 1985

May 31, 1984

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NIPPON ELECTRIC CO

H01L27/08; H01L21/762; (IPC1-7): H01L21/76; H01L27/08

Uchihara Shin

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