MANUFACTURE OF COMPOUND SEMICONDUCTOR DEVICE AND COMPOUND SEMICONDUCTOR DEVICE

Japanese Patent JPH06224121

A

PURPOSE: To newly directly manufacture a quantum well wire or a quantum superlattice structure which will become a structure of high quality having relatively few defects by causing epitaxial growth on a 311}, 211}, 111}, or 110} substrate. CONSTITUTION: A semiconductor laser device 311 has a GaAs n-type substrate 10 and a GaAs buffer layer 11 first grown on the substrate 10 and having a thickness of 0.1 to 0.5 μm. A regular crystal is ensured by the buffer layer 11. A Ga1-x Alx As n-type layer 12 usually having a thickness of 1 μm is grown on the buffer layer 11. Next, a Ga1-y Aly As layer (where y is usually 0.2) 13 is grown thereon. Further, a Ga1-z Alz As layer 14 is grown thereon. On the extremely thin layer 14, there is an extremely thin layer 15 having the same composition and thickness as those of the layer 13, that is, a Ga1-y Aly As layer having a thickness of 60 Å.

RIHARUTO NEETSUERU
ENU NIKORAI REEDENTSUO
ESUSHII RUTSUTSU DAABERITSUTSU
KURAUSU PURUUGU

JP3852892A

August 12, 1994

January 29, 1992

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MAX PLANCK GESELLSCHAFT

C30B23/08; C30B29/06; C30B29/08; C30B29/40; G02F1/015; H01L21/20; H01L21/203; H01L21/335; H01L21/338; H01L21/363; H01L29/04; H01L29/12; H01L29/66; H01L29/778; H01L29/80; H01L29/812; H01L31/0264; H01L31/0352; H01L31/036; H01L31/04; H01L31/10; H01L33/06; H01S5/00; H01S5/34; H01S5/32; (IPC1-7): H01L21/20; C30B29/06; C30B29/08; C30B29/40; H01L21/203; H01L21/363; H01L29/04; H01L29/66; H01L21/338; H01L29/812; H01L29/804; H01L31/04; H01L31/0264; H01L31/10; H01S3/18

Nihei Masataka

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