PURPOSE: To obtain a chip type film capacitor having excellent withstand voltage characteristics and moisture-resisting characteristics by a method wherein, after a dielectric film has been etched by reaction gas, a hot press treatment or a vacuum hot press treatment is conducted.
CONSTITUTION: A capacitor element 3 is formed by lap-winding a nonmetallized part 12, extending in longitudinal direction of a film 1, and a wide metallized polyethylene telephthalate PET film having a plural lines of electrodes 7. Subsequently, the above-mentioned element is cut at a cutting position 4 into individual capacitor elements, and after the PET film, as a dielectric, on an electrode lead-out edge face has been etched off by bringing it into contact with the oxygen plasma of reactive gas, a heat treatment is conducted by applying suitable pressure in the direction of lamination of a laminated material. Subsequently, an external electrode is formed by conducting a metallicon treatment, and a parent capacitor is obtained.
ITOI SHINSUKE
OTANI SHUJI
TAKAHASHI KAZUHIKO
IIJIMA YASUO
