Title:
MANUFACTURE OF FINE SILICON CARBIDE POWDER
Document Type and Number:
Japanese Patent JPS5939708
Kind Code:
A
Abstract:
PURPOSE: To form finely powdered SiC of high purity by thermally decomposing an organosilicon compound having an SiH bond and no SiX (X is halogen or O) bond in a vapor phase.
CONSTITUTION: An organosilicon compound having ≥1 SiH bond and no SiX (X is halogen or O) bond in the molecule such as a compound represented by formula I , II or III is introduced into a reaction zone heated to ≥1,000°C under nearly ordinary pressure, and the compound is thermally decomposed in the zone. At this time, a non-oxidative gas such as H2, N2, He or Ar is used as a carrier gas for the compound. The desired SiC can be obtd. easily in a high yield.
Inventors:
ENDOU MORINOBU
TAKAMIZAWA MINORU
MOTOMIYA TATSUHIKO
KOBAYASHI YASUSHI
TAKAMIZAWA MINORU
MOTOMIYA TATSUHIKO
KOBAYASHI YASUSHI
Application Number:
JP14734282A
Publication Date:
March 05, 1984
Filing Date:
August 25, 1982
Export Citation:
Assignee:
SHINETSU CHEM IND CO
International Classes:
C01B31/36; (IPC1-7): C01B31/36
Attorney, Agent or Firm:
Ryoichi Yamamoto
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