Title:
MANUFACTURE OF III - V COMPOUND SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPH04257218
Kind Code:
A
Abstract:
PURPOSE: To improve the formation of electrical contact by obtaining the layer of group V element by decomposing a compound for obtaining a group V monomer. CONSTITUTION: A layer 9 is formed by decomposing a compound, such as a group V hydride, and a group V monomer is generated due to the decomposition and is deposited on the surface of group III-V layer, where the monomer is exposed. For example, arsine is decomposed, thus forming arsenic monomer. During the deposition process, a substrate is cooled to at least a normal temperature, preferably equal to or less than normal temperatures. The cooled substrate reduces surface mobility, thus reducing flocculation and desorption. A compound to be used needs to generate a group V monomer due to decomposition.
Inventors:
MOSESU TAARUMUN ASOMU
Application Number:
JP21120591A
Publication Date:
September 11, 1992
Filing Date:
August 23, 1991
Export Citation:
Assignee:
AMERICAN TELEPHONE & TELEGRAPH
International Classes:
H01L21/205; H01L21/285; H01L21/314; (IPC1-7): H01L21/205
Attorney, Agent or Firm:
Masao Okabe (2 outside)