MANUFACTURE OF INVERTED-MESA TYPE SEMICONDUCTOR DEVICE

Title:

MANUFACTURE OF INVERTED-MESA TYPE SEMICONDUCTOR DEVICE

Document Type and Number:

Japanese Patent JPS538571

Kind Code:

A

Abstract:

PURPOSE: To prevent the breakage by forming the 2-streak mesa groove between each mesa and by making a thick depth part between the two streaks of the groove. And both the protective film and the electrode are formed simultaneously for all elements under a wafer state.

Inventors:

KOJIMA AKIRA
KOBAYASHI KAZUYOSHI
SUZUKI NORIO
UJITA KIYOSHI

Application Number:

JP8311876A

Publication Date:

January 26, 1978

Filing Date:

July 13, 1976

Export Citation:

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Assignee:

SONY CORP

International Classes:

H01L29/06; H01L21/329; H01L21/331; H01L21/78; H01L29/73; H01L29/74; (IPC1-7): H01L21/78; H01L29/06

Next Patent: HORIZONTAL WELDING METHOD AND SUPPORT APPARATUS MATERIAL USED FOR THIS WELDING METHOD