Title:
MANUFACTURE OF METALLIC CONTACT
Document Type and Number:
Japanese Patent JPH05267215
Kind Code:
A
Abstract:
PURPOSE: To provide a method of depositing an Al thin-film layer to form contacts of an improved quality in a semiconductor integrated circuit device. CONSTITUTION: The entire or part of a deposition process is made at a lower deposition rate at 400-500 deg.C, allowing the improved surface migration of the deposited Al atoms. The Al deposited in these conditions tend to fill up contact vias, without creating voids. To improve surface smoothness of the deposited Al, the deposition step is interrupted periodically.
Inventors:
Phu Sen E. Chen
Fu-Tai Ryo
Greek A. Dixit
Cheshire Way
Fu-Tai Ryo
Greek A. Dixit
Cheshire Way
Application Number:
JP806493A
Publication Date:
October 15, 1993
Filing Date:
January 21, 1993
Export Citation:
Assignee:
SGS-Thomson Microelectronics, Incorporated
International Classes:
H01L21/28; H01L21/285; H01L21/3205; H01L21/768; H01L23/52; (IPC1-7): H01L21/285; H01L21/28; H01L21/3205
Attorney, Agent or Firm:
Kazuo Kobashi (1 person outside)