Title:
MANUFACTURE FOR MIS SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS5424582
Kind Code:
A
Abstract:
PURPOSE: To establish MIS semiconductor device small in size, less in parasitic capacitance, and excellent in ohmic contactness with wiring materials, by forming the source and drain through using ion implantation.
Inventors:
TAMURA SHIYOUZOU
KAWAMOTO HIROSHI
KAWAMOTO HIROSHI
Application Number:
JP8933277A
Publication Date:
February 23, 1979
Filing Date:
July 27, 1977
Export Citation:
Assignee:
HITACHI LTD
International Classes:
H01L29/78; H01L21/265; H01L29/06; (IPC1-7): H01L21/265; H01L29/06; H01L29/78