Title:
MANUFACTURE OF MIS-TYPE SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS532085
Kind Code:
A
Abstract:
PURPOSE: To obtain a semiconductor device featuring a high integration performance, high response velocity and no disconnection by making the electrode window of SiO2 film through removal of Si3N4 film and giving a minute and gentle inclination to the hole wall.
Inventors:
INAYOSHI KATSUYUKI
MIYAO KAZUTOSHI
MIYAO KAZUTOSHI
Application Number:
JP7614376A
Publication Date:
January 10, 1978
Filing Date:
June 28, 1976
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01L29/78; H01L21/302; H01L21/306; H01L21/31; H01L21/316; (IPC1-7): H01L21/302; H01L21/31; H01L29/62; H01L29/78
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