Title:
MANUFACTURE OF SEMICONDUCTOR APPARATUS
Document Type and Number:
Japanese Patent JPS6022317
Kind Code:
A
Abstract:
PURPOSE:To improve reproducibility and uniformity and minimize a characteristic change by cleaning the surface of a substrate with gas plasma, sputtering gold and germanium simultaneously and alloying them under flash heating. CONSTITUTION:A spontaneous oxide film on the surface of a wafer 13 is removed by countersputter etching a substrate 12. Then gold and germinium are sputtered on the surface of the wafer 13 simultaneously by switching the bias to a gold target 23 and a germanium target 24. Following this process, the bias is switched to a nickel target 25 so that nickel is sputtered on the surface of the wafer 13. After that, flash annealing is carried out in a hydrogen atmosphere of a gold image furnace. The wafer is inserted into a core tube 26 of a flat furnace, and is heated instantaneously. After reaching 450 deg.C in approx. 10sec, the wafer is retained in the tube for two seconds.
Inventors:
NAKATSUKA MASAHIKO
Application Number:
JP13066983A
Publication Date:
February 04, 1985
Filing Date:
July 18, 1983
Export Citation:
Assignee:
NIPPON ELECTRIC CO
International Classes:
H01L21/28; (IPC1-7): H01L21/28
Attorney, Agent or Firm:
Uchihara Shin