PURPOSE: To form a region in which the compositions of a barrier metal layer and a metal layer to become wirings are continuously varied with good controllability by employing a planar magnetron sputtering device, and altering the material of a plurality of targets.
CONSTITUTION: After a composite target is disposed as a target of a semiconductor device, it is planar magnetron sputtered. That is, in order to first deposit tungsten 1b on a substrate to be deposited and to then deposit Al-1%Si alloy 1a, the intensity of a magnetic field by a control pole at the rear side of a planar magnetron cathode is varied, and an annular plasma region 2 is moved. Thus, since a barrier metal effective for a breakdown on a shallow junction which becomes a problem in a submicron device can be formed in one step of sputter depositing and an aluminum alloy can be continuously deposited by the barrier metal by means of the movement of an annular plasma region, the transient region of the barrier metal and the aluminum alloy can be formed with good controllability.
YAMAMOTO HIROSHI
FUJITA TSUTOMU
