PURPOSE: To improve the yield rate and the reliability of a device, by forming a side wall comprising a nitride film on the sidewall part of a gate electrode, and removing a titanium nitride, which is formed on the surface of the side wall, by a plasma etching method.

CONSTITUTION: An oxide film 11 and a nitride film 5 are sequentially formed on a silicon substrate 1, on which source/drain 10, a gate oxide film 2 and a gate electrode 3 are formed. Thereafter, the nitride film 5 is etched by an anisotropic etching method. A side wall 5A comprising the nitride film 5 are formed on the sidewall part of the gate electrode 3. Then, the oxide film 11 and the gate oxide film 2 on the source/drain 10 are removed. A titanum film is formed on the entire surface. Then, heat treatment is performed, and the titanium film on the side wall 5A is transformed into a titanium nitride film 8, and the titanum film on the source/drain 10 is transformed into a titanum silicide film 7. Then the titanum nitride film 8 is removed by a plasma etching method. Thus the yield rate and the reliability are improved.