Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPH01130573
Kind Code:
A
Abstract:
PURPOSE:To simplify recess etching, by performing ion irradiation to form a recess on a semiconductor substrate via an overhung type opening part, while changing the angle. CONSTITUTION:An ohmic electrode 25 is formed on an N-type GaAs layer 21 of the substrate of an inverse structure high electron mobility transistor (HEMT) and the like formed on a substrate 10. In order to form a gate electrode on the layer 21, a resist pattern 41 whose section is in the form of an overhung. By using the pattern 41 as a mask, ion irradiation is performed while the irradiation direction is changed. As a result, the ion reaches the lower side of the overhung. and a desired recess 41 is obtained. The gate electrode can be formed in a region corresponding with an opening area, so as not to be in contact with the layer 21. Thereby simplifying recess etching.
Inventors:
SAITO TADASHI
NISHI SEIJI
FUJISHIRO HIRONORI
NISHI SEIJI
FUJISHIRO HIRONORI
Application Number:
JP28858587A
Publication Date:
May 23, 1989
Filing Date:
November 17, 1987
Export Citation:
Assignee:
AGENCY IND SCIENCE TECHN
International Classes:
H01L21/302; H01L21/28; H01L21/3065; H01L21/338; H01L29/778; H01L29/80; H01L29/812; (IPC1-7): H01L21/28; H01L21/302; H01L29/80
Domestic Patent References:
| JPS62171162A | 1987-07-28 | |||
| JPS5693328A | 1981-07-28 |