Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPH0469948
Kind Code:
A
Abstract:
PURPOSE: To prevent Al, etc., from remaining after etching and reduce failures caused by the Al, etc., sticking on an IC chip in the next production process, by introducing such production processes that a silicon substrate is not exposed on a scribe surface, forming insulation films.
CONSTITUTION: On an N-type silicon substrate 100, an insulation film 101 made of silicon dioxide is formed by a conventional thermal oxidation method. Then, Al 102 is formed by a conventional deposition or sputtering. Then, since the Al 102 is unnecessary in a scribe region, it is removed by etching. Then, a passivation film 103 is formed on a pattern. Through the foregoing production processes, the scribe region is formed.
Inventors:
SUDO TAKAO
Application Number:
JP18210390A
Publication Date:
March 05, 1992
Filing Date:
July 10, 1990
Export Citation:
Assignee:
SEIKO EPSON CORP
International Classes:
H01L21/301; H01L21/78; (IPC1-7): H01L21/78
Attorney, Agent or Firm:
Kisaburo Suzuki (1 outside)
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