MANUFACTURE OF SEMICONDUCTOR DEVICE

Title:

MANUFACTURE OF SEMICONDUCTOR DEVICE

Document Type and Number:

Japanese Patent JPH0786242

Kind Code:

A

Abstract:

PURPOSE: To make it possible to process and remove an oxide film deposited during the formation of a plasma CVD oxide film in a plasma reaction chamber at a high speed.

CONSTITUTION: After a first tri-nitrogen fluoride plasma processing is performed, the pressure is lowered than the pressure used for the first tri-nitrogen fluoride plasma processing. What is more, other plasma processing, which excludes the tri-nitrogen fluoride processing, is performed. Then, the pressure is increased to a higher pressure than the lower pressure plasma processing so as to perform a second tri-nitrogen fluoride plasma processing, thereby including a process which removes an oxide film deposited during the formation of a film in the plasma reaction chamber for the construction of this device.

Inventors:

WATAYA HIROFUMI
TOKI MASAHIKO
OKUDA SHOJI
NAKAHIRA JUNYA
KIKUCHI HIDEAKI

Application Number:

JP22554793A

Publication Date:

March 31, 1995

Filing Date:

September 10, 1993

Export Citation:

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Assignee:

FUJITSU LTD
FUJITSU VLSI LTD

International Classes:

H01L21/302; C09K13/08; C23C16/44; H01L21/3065; H01L21/31; H01L21/316; (IPC1-7): H01L21/3065; H01L21/31; H01L21/316

Attorney, Agent or Firm:

Ariga Gunichiro

Next Patent: FORMATION OF FINE PATTERN