To provide a manufacturing method for a semiconductor device in which the thickness of a diaphragm can be controlled easily, in which a flat diaphragm face is obtained and by which a pressure can be measured with good accuracy.
Silicon nitride films 2 are formed on both faces of a (110) single- crystal silicon substrate 1, and a square opening part 3 is formed, by an etching operation, nearly in the central part of the silicon nitride film 2 on one face. In succession, the silicon nitride film 2 in which the opening part 3 is formed is used as a mask, an anisotropic etching operation is performed by using a KOH acqueous solution until the silicon nitride film 2 on the other face is reached, a through hole 4 is formed, and the silicon nitride films 2 are removed by an etching operation. Then, one main surface of a single-crystal silicon substrate 5 in which a silicon oxide film 6 is formed on one main surface is overlapped with the side of the face, of the single-crystal silicon substrate 1, to which the etching operation is not performed, a heat treatment at about 1100°C is executed, and the single-crystal silicon substrates 1, 5 are pasted.
SAIJO TAKASHI
YAMAGUCHI SHUICHIRO
Next Patent: APPARATUS AND METHOD FOR DETECTION OF CHANGE IN INTERNAL PRESSURE OF GAS PRESSURIZATION CONTAINER