To obtain a semiconductor device in which an irregularity in the irradiation energy of a pulsed laser is prevented, by adjusting a relationship between the size of a channel region, the pitch of the pulsed laser, and an angle which is formed by the direction in the channel width of the channel region and by a long-axis direction to be irradiated with the pulsed laser.
The direction of a channel region, i.e., the direction in the width W of the channel region, and the direction, i.e., the long-axis direction, of a line beam, in this case the horizontal direction, are set so as to form an angle which is decided by a specific relationship. That is to say, a relationship among a channel width W, a pulse pitch P and the angle is set so as to be expressed by a expression. As a result, even when, e.g., a defective crystallization region R is generated so as to pass the channel region, a possibility that the movement route MN of the channel region is worsened in the defective crystallization region R is reduced, parts MG's of the movement route MN evade the defective crystallization region R, it is possible to prevent the region R from being worsened, and a good element characteristic is obtained.
YAMADA TSUTOMU
YOKOYAMA RYOICHI
YONEDA KIYOSHI
