Title:
MANUFACTURE FOR SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS54107686
Kind Code:
A
Abstract:
PURPOSE:To establish the Schottky barrier diode less in leakage current, by enabling Pt patterning through the use of Ti for the mask of aqua regia. CONSTITUTION:On the N type Si substrate 11, the N<+> type region 12 is formed by diffusion being the cathode of the Schottky barrier diode, the SiO2 film 13 is coated on the entire surface, and it is covered with the intermediate layer 14 consisting of polycrystal Si. Next, opening passed through the region 12 is placed on the those lamination film, and evaporation is made by laminating the entire surface with Pt layer 15 and Ti layer 16. After that, on it, the resist pattern 17 is placed, and exposed Ti layer 16 is removed with etching using dilute fluoric acid or plasma by taking this as a mask. Next, the resist pattern 17 is removed, and Pt layer 15 is etched by taking the Ti layer 16 remained in heated aqua regia as a mask. After that, the Ti layer is removed by etching, heat treatment at 450 to 600 deg.C is made under H2 gas, Pt-Si alloy layer 18 is caused in the region 12, and the Al wiring is coated on the Pt layer 15.
Inventors:
OOTA MASAE
Application Number:
JP1407978A
Publication Date:
August 23, 1979
Filing Date:
February 13, 1978
Export Citation:
Assignee:
OKI ELECTRIC IND CO LTD
International Classes:
H01L21/3213; H01L21/28; H01L21/306; H01L21/308; H01L29/40; H01L29/43; (IPC1-7): H01L21/306; H01L21/88; H01L29/40
Domestic Patent References:
| JPS5289464A | 1977-07-27 | |||
| JPS5051257A | 1975-05-08 |