Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS5621319
Kind Code:
A
Abstract:
PURPOSE:To enable the production of an n-type region through self-adjustment and enable effective utilization for LSI or the like, by injecting arsenic ions into a silicon dioxide film and performing heat heatment to diffuse the arsenic into a semiconductor substrate. CONSTITUTION:A silicon dioxide film 12 is produced on the surface of an n-type Si substrate 10. Arsenic ions 14 are injected into the film 12. Patterning is then effected to remove the film 12 from an active region. Heat treatment is performed under nitrogen gas to diffuse the arsenic 14 into the surface of the substrate 10 to produce a channel stop 18. Since there is no silicon dioxide on the active region, the arsenic is not diffused into the region. Thermal oxidation is effected to produce a gate oxide film 16 on the active region of the substrate 10. A gate electrode is produced and source and drain diffusion is performed to manufacture an FET. Since the channel stop 18 is produced with self-adjustment to the active region, a fine pattern can be accurately manufactured.
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Inventors:
SHIRAI KAZUNARI
Application Number:
JP9761979A
Publication Date:
February 27, 1981
Filing Date:
July 31, 1979
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01L29/78; H01L21/225; H01L21/265; (IPC1-7): H01L21/225; H01L29/78