Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS58132947
Kind Code:
A
Abstract:
PURPOSE:To realize an excellent isolating structure, composed of an oxide film, with few crystal defects by a method wherein a crystal defects absorbing region in the vicinity of an inter-element oxide film isolating a semiconductor island region. CONSTITUTION:An Si nitride film 33 is formed surrounding a semiconductor island region 34 and a region 32 not included in said island region 34. The top and sides of the region 34 are covered with the film 33 with the intermediary of an Si oxide film 35 while the sides of the region 32 have no Si oxide film intermediary. Within the region 32, a number of crystal defects 37 are generated, under stress exerted by the film 35, wherein the region 32 absorbs the defects to be created otherwise in the region 34. The sides of the region 34 being covered with the film 33, an isolating oxide film 36 has virtually no lateral penetration, which results in a fine structure precise in dimensions of an isolating oxide film.
Inventors:
KAWAKITA KENJI
SAKAI HIROYUKI
FUJITA TSUTOMU
TAKEMOTO TOYOKI
SAKAI HIROYUKI
FUJITA TSUTOMU
TAKEMOTO TOYOKI
Application Number:
JP1601682A
Publication Date:
August 08, 1983
Filing Date:
February 03, 1982
Export Citation:
Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
H01L21/76; H01L21/316; H01L21/762; (IPC1-7): H01L21/31; H01L21/76; H01L21/95
Attorney, Agent or Firm:
Toshio Nakao