MANUFACTURE OF SEMICONDUCTOR DEVICE

Title:

MANUFACTURE OF SEMICONDUCTOR DEVICE

Document Type and Number:

Japanese Patent JPS5918639

Kind Code:

A

Abstract:

PURPOSE:To purify the rear surface of wafer without destruction of apparatus at the surface by eliminating impurity at the rear surface through the etching of semiconductor wafer only from the rear surface. CONSTITUTION:The surface of wafer 4 is masked by resist and the wafer is placed with the rear surface turned to the upper side while an etchant 5 falls on the belt 6. Or a wafer is accommodated within a chamber 7 and may be etched selectively and vertically only at the rear surface with a plasma gas 8 generated by applying a high frequency field across an electrode 9 and a board 10. When the rear surface of the wafer is purified as described above, it is very advantageous for diffusion of phosphorus or mounting.

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Inventors:

HONMA MICHIO

Application Number:

JP12792982A

Publication Date:

January 31, 1984

Filing Date:

July 22, 1982

Export Citation:

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Assignee:

NIPPON ELECTRIC CO

International Classes:

H01L21/302; H01L21/306; H01L21/3065; (IPC1-7): H01L21/302

Attorney, Agent or Firm:

Uchihara Shin

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