Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS5929416
Kind Code:
A
Abstract:
PURPOSE:To make it possible to form epitaxial layers different in carrier density using one solution, by a method wherein the amount of an impurity contained in a solution is reduced by forming a vacuum state in the course of a liquid phase epitaxial growth. CONSTITUTION:In a first step, a solution containing a predetermined composition is brought into contact with a substrate 6 to grow a liquid phase epitaxial layer 7. In a second step, after the concentration of a doping impurity in the solution is decreased by reducing the pressure, an epitaxial layer 8 is grown using the same solution. Finally, in a third step, after a doping impurity with reverse conductivity to the former doping impurity is mixed into the solution from a vapor phase, an epitaxial growth is effected using this solution to form a layer 9 of reverse conductive type to the layers 7, 8 formed in the first and second steps, respectively. Thus, a high-efficiency light-emitting semiconductor device is formed by employing a single solution and carrying out the control of the step for changing the concentration and conductivity type of the doping impurity therein by a vapor phase control method.
Inventors:
KAWABATA TOSHIHARU
FURUIKE SUSUMU
MATSUDA TOSHIO
IWASA HITOO
FURUIKE SUSUMU
MATSUDA TOSHIO
IWASA HITOO
Application Number:
JP13941882A
Publication Date:
February 16, 1984
Filing Date:
August 10, 1982
Export Citation:
Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
H01L21/208; H01L33/30; (IPC1-7): H01L33/00
Attorney, Agent or Firm:
Akira Kobiji (2 outside)