PURPOSE: To shorten the manufacturing process to the end products by effecting the removal of a passivation film on a memory film, ion implantation for writing through an interlayer insulating film or the like and annealing at photoetching of the passivation film.
CONSTITUTION: After H2 annealing of an Al wiring 9, a passivation film 10 is deposited on the overall surface of the uppermost layer. Then a hole 12 and a hole 11 for ion implantation are formed simultaneously by using a resist mask for forming the hole 12. The hole 11 is formed by selectively removing the passivation film on the memory set which is made into a depletion type MOSFET by ion implantation of P ions. Accordingly, P-ion implantation for writing is effected by using the passivation film 10 as a mask. This ion implantation is effected by high energy so that the ion implantation into a channel region 13 through an interlayer film 7 and a gate electrode 4 becomes possible. After that, H2 annealing at 450°C, for example, is made thereby completing writing of ROM.
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IWAI TOSHIJI
MEGURO SATOSHI
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