MANUFACTURE OF SEMICONDUCTOR DEVICE

Japanese Patent JPS63289843

A

PURPOSE: To restrain hillock, and improve reliability, by forming an interlayer insulating film by using a resin film composed of a specific polyamide acid silicon type intermediate, and using an inorganic insulating film formed at a specific temperature, as a lower interlayer insulating film.

CONSTITUTION: A first metal wiring 3 is formed on the main surface of a semiconductor substrate 1, and an inorganic insulating film 4 is formed on the substrate main surface at a temperature lower than or equal to 200°C, so as to cover the metal wiring. On the semiconductor substrate 1, solution containing a polyamide acid silicon type intermediate is spread, and subjected to heat treatment to form an organic film 5. The above intermediate is obtained by performing, on the inorganic insulating film 4, a mixing reaction of tetracarboxylic acid dianhydride shown by expression I, diamine shown by expression II, and amino silicon compound shown by equation III. After that, the orgnaic film 5 is subjected to isotropic etching, and in succession, the inorganic film 4 is subjected to anisotropic dry etching to form an aperture part. A second metal wiring 7 is formed on the organic film 5 containing the aperture part. In the expression III, R3 and R4 represent independent alkyl group or phenyl group having 1W6 carbon atoms, an 1≤K≤3. Thereby, the generation of hillocks in the aluminum wiring can be prevented.

YOSHIKAWA KIMIMARO
EGUCHI KOHEI
HONMA TETSUYA
NUMAZAWA YOICHIRO

JP12520787A

November 28, 1988

May 21, 1987

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NEC CORP

H01L21/312; H01L21/31; H01L21/47; H01L21/768; H01L23/522; (IPC1-7): H01L21/312; H01L21/90; H01L21/95

JPS6253651U	1987-04-03
JPS60171143U	1985-11-13

Naoki Kyomoto (2 outside)

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