Title:
MANUFACTURE OF SEMICONDUCTOR ELEMENT
Document Type and Number:
Japanese Patent JPS542677
Kind Code:
A
Abstract:
PURPOSE: To improve high-frequency characteristics with the thickness of a gate electrode made small by eliminating the need of mask matching for gate-electrode formation, by making use of a diffusing aperture used for forming the gate region as it is when providing the gate electrode.
Inventors:
SHINO TOSHIO
Application Number:
JP6673777A
Publication Date:
January 10, 1979
Filing Date:
June 08, 1977
Export Citation:
Assignee:
TOKYO SHIBAURA ELECTRIC CO
International Classes:
H01L29/80; H01L21/225; H01L29/06; (IPC1-7): H01L21/225; H01L29/06; H01L29/80
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