PURPOSE: To prevent the generation of cracks when a wafer is diced, by forming fine recessed and projecting parts on surfaces of scribe streets so that the scribe streets are satinized.

CONSTITUTION: Minute recessed and projecting parts are formed on scribe streets 8 which bound elements of a semiconductor wafer by a plasma etching method or the like in a wafer process so that the wafer is satinized, and cutting grooves 6 are formed on the semiconductor wafer by a dicing saw or the like in order to separate this wafer into individual elements. Because the scribe streets 8 are finely recessed and projected to satinize, residual distortion occurs, for example, in the recessed parts formed by satinization. Therefore, even if fragments 7 are generated when the wafer is cut, the cracks stay in the recessed part and do not advance to a diffusion layer 3 and an oxidizing film 4, so that characteristic deterioration can be prevented.