MANUFACTURE OF SOI SUBSTRATE - KYUSHU KOMATSU DENSHI KK

Title:

MANUFACTURE OF SOI SUBSTRATE

Document Type and Number:

Japanese Patent JPH08107092

Kind Code:

A

Abstract:

PURPOSE: To provide a manufacturing method for an SOI substrate which can be manufactured in a short time without generating a V-shaped groove by performing grind work so that the thickness of the residual layer of a chamfered active substrate is thinned and the dispersion thereof is reduced.

CONSTITUTION: A stuck wafer 4 is obtained by sticking an active substrate 3 to a supporting substrate 2. A grindstone 1 for grinding is provided in a dicing machine and the stuck wafer 4 is rotated in the horizontal direction and at the same time the grindstone 1 for grinding is rotated vertical to the active substrate 3. The grindstone 1 for grinding is brought into contact with the upper surface of the peripheral part of the stuck wafer 4 from the upper side to grind the peripheral part of the active substrate 3 so as to leave the residual layer.

Inventors:

NAKAYOSHI YUICHI
ISHII AKIHIRO
HASHIGUCHI ERIKO

Application Number:

JP27417794A

Publication Date:

April 23, 1996

Filing Date:

September 30, 1994

Export Citation:

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Assignee:

KYUSHU KOMATSU DENSHI KK
KOMATSU DENSHI KINZOKU KK

International Classes:

H01L27/12; H01L21/02; H01L21/304; (IPC1-7): H01L21/304; H01L27/12

Attorney, Agent or Firm:

Akira Saito

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