PURPOSE: To avoid the oxidation of a substrate which is caused by the atmosphere by a method wherein, after the substrate is put into film forming and processing facilities from the atmosphere, the substrate is not taken out into the atmosphere.
CONSTITUTION: A substrate is transferred by a conveyance line 12 whose atmosphere is substituted by inert gas. An Al film is formed on the substrate by a sputtering apparatus 2 and the substrate is transferred by a conveyance line 13 which is in a depressurized state. After an SiN film, an a Si film and an n-type a-Si film are formed by a glow discharge method in a CVD apparatus 3, the substrate is transferred in inert gas again and resist is applied by a coating apparatus 4. Thus, without being exposed to the atmosphere, the substrate is transferred through an aligner 5, a development apparatus 6 and an etching apparatus 7 and the resist is removed by a resist peeling apparatus 8. Then the side surfaces of the Al wiring are inactivated by an anode formation apparatus 9 to complete a gate line and an a-Si pattern. After a sputtering process in an ITO sputtering apparatus 10, the substrate is transferred to a laser processing apparatus 11 without breaking a vacuum. A drain pattern is drawn by a laser beam with a wavelength suitable for removing ITO to complete a TFT.
KOZAI KIYAO
HIROSHIMA MINORU
YANAI MASAHIRO
MATSUDA MASAAKI
HORII JUICHI
HASHIMOTO YUICHI
