Title:
MANUFACTURE OF THIN-FILM TRANSISTOR
Document Type and Number:
Japanese Patent JPH05218083
Kind Code:
A
Abstract:
PURPOSE: To improve channel conductivity by forming a source electrode and drain electrode of a channel layer, so as to contact only the side faces of a semiconductor layer for reducing the series resistance. CONSTITUTION: On an insulating transparent substrate 11, a gate electrode 12 is formed. An insulating layer 19 and semiconductor or less are formed in the entire surface. A photoresist is applied to form a resist pattern with the gate electrode 12 used as a mask. Using it as a mask, the semiconductor layer is etched to form a pattern. Over the entire exposed surface, an impurity is doped to form a specified conductive-type resistance contact layer on which an Al, Mo or W metal layer is formed and photo-etched, to remove portions corresponding to the upper layer of the gate electrode and both side edges, thereby forming a source electrode 17a and drain electrode 17b.
Inventors:
KIYO SHIYOUGU
Application Number:
JP22621292A
Publication Date:
August 27, 1993
Filing Date:
August 25, 1992
Export Citation:
Assignee:
GOLD STAR CO
International Classes:
H01L29/78; H01L21/336; H01L29/786; (IPC1-7): H01L21/336; H01L29/784
Domestic Patent References:
| JPS58184766A | 1983-10-28 | |||
| JPS61171166A | 1986-08-01 | |||
| JPS6042868A | 1985-03-07 | |||
| JPS5968975A | 1984-04-19 |
Attorney, Agent or Firm:
Kazuo Sato (3 others)