Title:
MANUFACTURING EQUIPMENT OF THIN FILM
Document Type and Number:
Japanese Patent JPS60193321
Kind Code:
A
Abstract:
PURPOSE:To obtain a thin film which has nothing such as a pin hole by providing a shield around an electrode for discharge power supply holding a definite gap and by covering the gap with an insulator when a thin film is deposited on a substrate placed on one electrode and plasma discharge is generated between the electrodes. CONSTITUTION:Between outer walls 1 constituting a reaction furnace, the first electrode 3 which holds a substrate 2 on the lower surface and the second electrode 5 which has a terminal 4 for supplying direct current or alternating current voltage penetrating through the outer wall 1 are installed face to face. On the side and the back surface of the second electrode 5, a shield plate 6 is also provided. A raw material gas such as SiH4, CeH4 is supplied in the reaction furnace and a required thin film is deposited on the surface of the substrate 2. In this construction, the edge of the second electrode 5 and the upper edge of the adjacent shield plate 6 are covered with an insulator 8 such as glass or ceramic and a strong abnormal discharge at the time of plasma discharge generation is prevented. Consequently, a good quality amorphous silicon hydride film which has no pin hole can be obtained.
Inventors:
MORI KOUSHIROU
ARITA TAKASHI
AZUMAGUCHI MIKIHIRO
HANABUSA AKIRA
ITOU ZENICHIROU
ARITA TAKASHI
AZUMAGUCHI MIKIHIRO
HANABUSA AKIRA
ITOU ZENICHIROU
Application Number:
JP4963084A
Publication Date:
October 01, 1985
Filing Date:
March 15, 1984
Export Citation:
Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
H01L31/04; H01L21/205; (IPC1-7): H01L31/04
Attorney, Agent or Firm:
Toshio Nakao