To obtain an electron emission device capable of obtaining a stable discharge current by reducing an operation voltage.
The manufacturing method of the electron emission device includes a process laminating a first insulation layer, a second insulation layer made of a different material from the first insulation layer and an electrode on a substrate in this order, a process exposing an upper surface of the first insulation layer continued on a side surface of the first insulation layer by etching a side surface of the second insulation layer, and a process forming a polycrystalline film of lanthanum boride over an upper surface and a side surface of the first insulation layer. In the electron emission device, a size of a crystallite which structures the polycrystalline film is to be 2.5 nm or more, and a film thickness of the polycrystalline film is to be 100 nm or less.
NISHIDA AKIYUKI
MORIGUCHI TAKUTO
TSUKAMOTO TAKEO
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