Title:
エピタキシャルウエーハの製造方法
Document Type and Number:
Japanese Patent JP4615161
Kind Code:
B2
Abstract:
The present invention provides an epitaxial wafer wherein a silicon epitaxial layer is formed on a surface of a silicon single crystal wafer in which nitrogen is doped, and a density of oxide precipitates having such a size that a gettering capability can be achieved in a bulk is 10<8> numbers/cm<3> or more. And the present invention also provides a method for producing an epitaxial wafer wherein a silicon single crystal in which nitrogen is doped is pulled by Czochralski method, the silicon single crystal is processed into a wafer to produce a silicon single crystal wafer, and the silicon single crystal wafer is subjected to heat treatment so that a density of oxide precipitates having such a size that a gettering capability can be achieved in a bulk of the wafer may be 10<8> numbers/cm<3> or more, and then the silicon single crystal wafer is subjected to epitaxial growth. A silicon single crystal wafer which surely has a high gettering capability irrespective of a device process can be obtained herewith.
Inventors:
Tobe Toshimi
Application Number:
JP2001253510A
Publication Date:
January 19, 2011
Filing Date:
August 23, 2001
Export Citation:
Assignee:
Shin-Etsu Semiconductor Co., Ltd.
International Classes:
H01L21/322
Domestic Patent References:
| JP2000211995A | ||||
| JP58018929A | ||||
| JP2002076006A |
Attorney, Agent or Firm:
Mikio Yoshimiya