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Title:
MANUFACTURING METHOD FOR GROUP III NITRIDE CRYSTAL, AND GROUP III NITRIDE CRYSTAL AND GROUP III NITRIDE CRYSTAL SUBSTRATE OBTAINED BY THE SAME
Document Type and Number:
Japanese Patent JP2012012292
Kind Code:
A
Abstract:

To provide a manufacturing method for a group III nitride crystal to which silicon is homogeneously doped at a high concentration in an in-plane direction and a film thickness direction achieving excellent controllability and reproducibility.

The method of manufacturing the group III nitride crystal includes a process to prepare a ground substrate in a crystal growth furnace and a growth process to grow the group III nitride crystal on the ground substrate by reacting halides of group III elements with a compound including nitrogen element. The method of manufacturing the group III nitride crystal comprises supplying further a halogen element containing substance and a silicon containing substance to the crystal growth furnace at the growth process from the same lead-in tube.


Inventors:
FUJITO TAKESHI
UCHIYAMA YASUHIRO
SUZUKI YOSHINORI
Application Number:
JP2011120731A
Publication Date:
January 19, 2012
Filing Date:
May 30, 2011
Export Citation:
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Assignee:
MITSUBISHI CHEM CORP
International Classes:
C30B29/38; C23C16/34; C23C16/455; C30B25/14; H01L21/205
Domestic Patent References:
JP2004296640A2004-10-21
JP2010500267A2010-01-07
JP2006173148A2006-06-29
JP2009126722A2009-06-11
JP2009126723A2009-06-11



 
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