Title:
MANUFACTURING METHOD OF HEAT RADIATION PLATE FOR SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP3812571
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide the manufacturing method of a heat radiation plate for a semiconductor device, which does not generate surface roughness of the metal plate caused by an oil layer generated between a first die and the metal plate.
SOLUTION: The manufacturing method of the heat radiation plate for the semiconductor device is provided with a burr removing process for performing burr clearance of the metal plate extracted by the first die and a first punch, a metal plate gradient formation process for forming gradient in a first principal surface end face of the metal plate, and a level difference formation process for forming a level difference on the second principal surface of the metal plate. The manufacturing method can prevent the metal plate from the surface roughness caused by the oil layer generated between the first die and the metal plate.
Inventors:
Tomio Senoo
Toyoki Tanaka
Hiroshi Sanada
Junichi Wakabayashi
Toyoki Tanaka
Hiroshi Sanada
Junichi Wakabayashi
Application Number:
JP2004086261A
Publication Date:
August 23, 2006
Filing Date:
March 24, 2004
Export Citation:
Assignee:
Matsushita Electric Industrial Co., Ltd
International Classes:
H01L23/36; (IPC1-7): H01L23/36
Domestic Patent References:
| JP8250630A | ||||
| JP9066335A | ||||
| JP58004395A |
Attorney, Agent or Firm:
Fumio Iwahashi
Hiroki Naito
Daisuke Nagano
Hiroki Naito
Daisuke Nagano