To provide a method for producing a zinc oxide single crystal film which grows on a silicon substrate produced at a low cost and has excellent workability, and has high crystal integrity in the vertical direction to the substrate surface and in the crystal film and is electrically insulated from the silicon substrate.
A single crystal thin film 2 of calcium fluoride is epitaxially grown on a silicon single crystal substrate 1, and a zinc oxide single crystal film 3 is epitaxially grown on the single crystal thin film 2 of calcium fluoride. When the thickness of the single crystal thin film 2 of calcium fluoride is 15 nm or more, a high-quality zinc oxide single crystal film 3, which is oriented to a c axis in the vertical direction with respect to the surface of the substrate and is free from the rotation of a crystalline domain in the surface of the film, is obtained. When the thickness of the single crystal thin film 2 of calcium fluoride is 100 nm or more, the silicon single crystal substrate 1 and the zinc oxide single crystal film 3 are insulatingly separated.
COPYRIGHT: (C)2003,JPO
Masataka Inoue
Nobuhiko Sasa
Koike one step
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