Title:
窒化物半導体発光素子の製造方法
Document Type and Number:
Japanese Patent JP7146736
Kind Code:
B2
Abstract:
In a method for manufacturing a nitride semiconductor light-emitting element by splitting a semiconductor layer stacked substrate including a semiconductor layer stacked body with a plurality of waveguides extending along the Y-axis to fabricate a bar-shaped substrate, and splitting the bar-shaped substrate along a lengthwise split line to fabricate an individual element, the waveguide in the individual element has different widths at one end portion and the other end portion and the center line of the waveguide is located off the center of the individual element along the X-axis, and in the semiconductor layer stacked substrate including a first element forming region and a second element forming region which are adjacent to each other along the X-axis, two lengthwise split lines sandwiching the first element forming region and two lengthwise split lines sandwiching the second element forming region are misaligned along the X-axis.
Inventors:
Daisuke Ikeda
Shimizu source
Hideo Kitagawa
Toru Takayama
Masayuki Ono
Left character Katsuya
Osamu Tomita
Kawasaki Riko
Shimizu source
Hideo Kitagawa
Toru Takayama
Masayuki Ono
Left character Katsuya
Osamu Tomita
Kawasaki Riko
Application Number:
JP2019509693A
Publication Date:
October 04, 2022
Filing Date:
March 23, 2018
Export Citation:
Assignee:
Nuvoton Technology Japan Corporation
International Classes:
H01S5/343; H01L21/301; H01S5/02
Domestic Patent References:
| JP6275714A | ||||
| JP11204880A | ||||
| JP2011029224A | ||||
| JP10027942A | ||||
| JP2011243857A | ||||
| JP2010123869A | ||||
| JP8172238A | ||||
| JP2013149845A | ||||
| JP2004259872A | ||||
| JP11186659A | ||||
| JP2001308459A | ||||
| JP2007266575A | ||||
| JP2009295680A |
Foreign References:
| US9209596 |
Attorney, Agent or Firm:
Hiroi Arai
Teraya Eisaku
Shinichi Michizaka
Teraya Eisaku
Shinichi Michizaka