Title:
MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE AND THE SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2003023074
Kind Code:
A
Abstract:
To provide the manufacturing method of a semiconductor device and the semiconductor device, for which the shape of a contact hole is an appropriate shape even when the micronization of the semiconductor device is advanced.
Since the shape of the contact hole 2a is provided so as to gradually and continuously reduce an opening as approaching the side of a lower layer wiring layer 1, a void part as before is not generated in a barrier metal layer 3 and a metal wiring layer 4 formed along the sidewall of the contact hole 2a.
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Inventors:
KOBAYASHI HEIJI
Application Number:
JP2001207543A
Publication Date:
January 24, 2003
Filing Date:
July 09, 2001
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L21/265; H01L21/302; H01L21/306; H01L21/3065; H01L21/768; H01L21/28; (IPC1-7): H01L21/768; H01L21/28; H01L21/306; H01L21/3065
Attorney, Agent or Firm:
Hisami Fukami (4 outside)
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