To realize micromirror formation of high quality by an easy manufacturing process in a manufacturing method of a semiconductor device having a micromirror formed by anisotropic etching of a semiconductor substrate.
A TiN film 102 of normal temperature formation whose etching resistance to anisotropic etching solution is more excellent than that of a silicon oxide film or the like is used as an etching mask for performing anisotropic etching for a semiconductor substrate 101. Since pattern accuracy of an anisotropic etching mask improves, accuracy of micromirror formation also improves, thus enabling formation of a micromirror of higher flatness. Since the TiN film 102 can be readily removed after anisotropic etching, it is possible to eliminate the need for additional process for removal of an etching mask which remains in eaves shape after anisotropic etching, thus realizing micromirror formation of high quality without increasing manufacturing process.
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YASUKAWA HISATADA
OBARA NAOKI
