Title:
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2012207958
Kind Code:
A
Abstract:
To provide a high-safety manufacturing method of a semiconductor device including a B/I (Burn-In) test process.
In the B/I test process, a maximum current limit Ilmt (max) to be supplied from a B/I testing device to a B/I board BIBD is set based on a margin α in which a maximum operation current Icc (max) of a testing object device DUT, the number N of DUTs mounted on the BIBD, and a dispersion are taken into consideration. The B/I testing device monitors a power supply current value supplied to the BIBD and, when the value exceeds the maximum current limit Ilmt (max), issues an alarm, shuts off the supply of the power, and the like.
Inventors:
SUZUKI KOJI
UMAHA MASATOSHI
UMAHA MASATOSHI
Application Number:
JP2011072399A
Publication Date:
October 25, 2012
Filing Date:
March 29, 2011
Export Citation:
Assignee:
RENESAS ELECTRONICS CORP
International Classes:
G01R31/26
Attorney, Agent or Firm:
Yamato Tsutsui
Atsushi Sugada
Akiko Tsutsui
Toru Nakahara
Tetsuya Sakaji
Atsushi Sugada
Akiko Tsutsui
Toru Nakahara
Tetsuya Sakaji