To provide a manufacturing method of a semiconductor device capable of improving throughput.
According to an embodiment, there is provided a manufacturing method of a semiconductor device which comprises an extraction step, a deceleration step, an implantation step, and a setting step. The extraction step applies a first voltage to an electrode for extracting ion beam from an ion source to extract the ion beam from the ion source. The deceleration step reduces an acceleration energy of the ion beam by applying a second voltage to a decelerator through which the ion beam passes. The implantation step forms a first impurity profile based on ions included in the ion beam and a second impurity profile based on neutral particles included in the ion beam on a substrate by irradiating the substrate with the ion beam which passed the decelerator. The setting step sets the first voltage and the second voltage according to the second impurity profile.
JINGUJI MASAYUKI
HATANO KOJI
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