Title:
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP3952735
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a manufacturing method for manufacturing a semiconductor device without lowering the dielectric breakdown strength of an insulating layer of an oxide film and without lowering long period reliability by preventing oxygen deficiency of the oxide film while forming a conductive layer by a CVD method on the oxide film provided as the insulating layer.
SOLUTION: The manufacturing method forms a conductive film 44 in a non-reducing atmosphere when the conductive film 44 is formed as a gate electrode on the oxide film provided as a gate insulating layer 42. Thereby the oxygen deficiency of the oxide film is prevented while the conductive film 44 is formed on the oxide film by CVD or the like, and a semiconductor device can be obtained without lowering the dielectric breakdown strength of the insulating layer of the oxide film and without lowering long period reliability.
Inventors:
Kojiro Nagaoka
Masaki Saito
Masaki Saito
Application Number:
JP2001327038A
Publication Date:
August 01, 2007
Filing Date:
October 25, 2001
Export Citation:
Assignee:
ソニー株式会社
International Classes:
C23C16/44; H01L21/205; H01L21/285; H01L21/3205; H01L29/49; (IPC1-7): H01L21/205; C23C16/44
Domestic Patent References:
| JP59078916A | ||||
| JP6045613A | ||||
| JP7120779A | ||||
| JP10183357A | ||||
| JP2001118677A |
Attorney, Agent or Firm:
Yoshitsuno Kakuda
Hironobu Isoyama
Hironobu Isoyama